FQPF90N10V2 mosfet equivalent, 100v n-channel mosfet.
*
*
*
*
*
* 90 A, 100V, RDS(on) = 0.01Ω @VGS = 10 V Low gate charge ( typical 147 nC) Low Crss ( typical 300 pF) Fast switching 100% avalanche tes.
lowest Rds(on) is required.
®
Features
*
*
*
*
*
* 90 A, 100V, RDS(on) = 0.01Ω @VGS = 10 V Low.
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.
Image gallery
Download